Gen 3 SiC devices improve power density and reduce losses, supporting longer range in electric vehicles (EVs). Bosch has introduced its third generation of silicon carbide (SiC) chips, marking a ...

Explore how VHU Series capacitors reduce DC-DC power consumption in automotive applications, ensuring stable performance and energy-efficient designs.

Exploring the benefits of GaN HEMTs in the various joints of humanoid robotics, including wrist/elbow/ankle and hip/knee/shoulder. Once considered to be under the realm of science fiction, humanoid ...

SiC and GaN stand center stage, controlling many different industries’ dynamics. With power management becoming a fundamental aspect of emerging electronics applications such as vehicle ...

Texas Instruments (TI) has released two new professional design tools for power management to meet the expanding needs of AI and support scalable designs from 12V and 48V to 800V. The 30kW AI server ...

The transition from conventional 54V power distribution to an 800 VDC system marks a transformative step in data center architecture, designed to surpass the physical constraints of current ...

The new solutions combine both companies’ design expertise with Flex’s manufacturing and scale to market through Renesas’s distribution. Flex Power Modules has announced a strategic partnership with ...

In this issue of our eBook, we delve into the core of power electronics innovation and how design is evolving. This month, we delve into the core of power electronics innovation. In this issue, Würth ...

The FinFET three-dimensional transistor architecture has become fundamental to modern semiconductor manufacturing. FinFET (Fin Field-Effect Transistor) represents a revolutionary advancement in ...

Through its partnership with NVIDIA, Infineon is supporting the shift to a radically new 800V HVDC system, leveraging advanced technologies such as GaN and SiC. As artificial intelligence (AI) and ...

Mike Engelhardt started out simulating particle collisions at a physical lab and later wrote a simulator for a scanning electron microscope. For those who may not know, Mike Engelhardt is the author ...

Future Electronics’ power system design laboratory, based in London, has implemented a SiC-MOSFET-based design for a 3-kW LLC power supply, which steps a nominal 390-VDC input down to a 49-VDC nominal ...