Abstract: The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of ...
Abstract: When, in 1956, Artificial Intelligence (AI) was officially declared a research field, no one would have ever predicted the huge influence and impact its description, prediction, and ...
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