Abstract: This work describes an SRAM architecture with in-memory generation of both dynamic and multi-bit static entropy. This inexpensively extends complete key generation capabilities to any system ...

Abstract: Conventional content addressable memory (BCAM and TCAM) uses specialized 10T/16T bit cells that are significantly larger than 6T SRAM cells. A new BCAM/TCAM is proposed that can operate with ...

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Bit flipping is no longer a rare reliability issue but a systemic risk driven by shrinking process nodes, higher clock speeds, lower voltages, and radiation exposure, leading to silent data corruption ...