IEEE

CMOS Compatible Process Integration of SOT-MRAM with Heavy-Metal Bi-Layer Bottom Electrode and 10ns Field-Free SOT Switching with STT Assist

Abstract: This paper demonstrates a CMOS compatible process integration of spin-orbit torque (SOT) device with a unique bi-layer SOT bottom electrode. An effective spin-Hall angle of 0.27, a median ...
IEEE

A Linear Current Starved Voltage Controlled Ring Oscillator With Wide Tuning Range Using 180nm CMOS Technology

Abstract: This paper presents the evaluation and performance analysis of 5 stage Current Starved Voltage Controlled ring Oscillator (CSVCO) which employ the method of linearization technique. In this ...