The n-type cell was built with phosphorus-doped LPCVD poly-Si passivating contacts and achieved a remarkable open-circuit voltage of 691.7 mV. According to its creators, with some adjustments the cell ...
BILTHOVEN, the Netherlands — ASM International N.V. here today announced development of low-cost, low-pressure chemical vapor deposition (LPCVD) process for poly-crystalline silicon-germanium (SiGe) ...
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